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| FDS8882 N-Channel PowerTrench(R) MOSFET December 2008 FDS8882 N-Channel PowerTrench(R) MOSFET 30 V, 9 A, 20.0 m Features Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 A Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant General Description The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications Notebook System Regulators DC/DC Converters D D D D D D D SO-8 S Pin 1 S G S D 8 1S 5 6 7 4 G 3S 2S MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 C TA = 25 C (Note 3) (Note 1a) (Note 1b) Ratings 30 20 9 21 32 2.5 1.0 -55 to +150 Units V V A mJ W C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 C/W Package Marking and Ordering Information Device Marking FDS8882 Device FDS8882 Package SO8 Reel Size 13 " Tape Width 12 mm Quantity 2500 units (c)2008 Fairchild Semiconductor Corporation FDS8882 Rev.C 1 www.fairchildsemi.com FDS8882 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 4 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 8 A VGS = 10 V, ID = 9 A, TJ =125 C VDS = 5 V, ID = 9 A 1.0 1.7 -6 13.2 16.6 18.5 36 20.0 22.5 28.0 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 707 138 88 1.8 940 185 135 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 15 V, ID = 9 A VDD = 15 V, ID = 9 A, VGS = 10 V, RGEN = 6 7 3 19 4 14 8 2.2 2.8 14 10 35 10 20 11 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9 A VGS = 0 V, IS = 2.1 A IF = 9 A, di/dt = 100 A/s 0.8 0.7 17 6 1.2 1.2 31 12 V ns nC NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 1 mH, IAS = 8 A, VDD = 27 V, VGS = 10 V. (c)2008 Fairchild Semiconductor Corporation FDS8882 Rev.C 2 www.fairchildsemi.com FDS8882 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 21 18 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 3.5 V 3.0 VGS = 3 V 2.5 2.0 1.5 1.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V VGS = 3.5 V 15 12 9 6 3 0 0 VGS = 3 V VGS = 6 V VGS = 4.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.5 0 3 6 9 12 15 18 21 ID, DRAIN CURRENT (A) 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 SOURCE ON-RESISTANCE (m) ID = 9 A VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 40 ID = 9 A rDS(on), DRAIN TO 30 TJ = 125 oC 20 10 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 21 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 30 18 ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 0 V 10 TJ = 150 oC 15 12 9 VDS = 5 V 1 TJ = 25 oC TJ = 150 oC 6 3 TJ = 25 oC 0.1 TJ = -55 oC TJ = -55 oC 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDS8882 Rev.C 3 www.fairchildsemi.com FDS8882 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 9 A 2000 1000 VDD = 10 V CAPACITANCE (pF) Ciss 8 6 VDD = 15 V Coss 4 VDD = 20 V 100 Crss f = 1 MHz VGS = 0 V 2 0 0 3 6 9 12 15 Qg, GATE CHARGE (nC) 20 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT (A) 10 TJ = 25 oC 8 6 VGS = 10 V VGS = 4.5 V TJ = 100 oC 4 2 RJA = 50 C/W o TJ = 125 oC 1 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 o 150 tAV, TIME IN AVALANCHE (ms) TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 P(PK), PEAK TRANSIENT POWER (W) THIS AREA IS LIMITED BY rDS(on) ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1000 VGS = 10 V 10 100 us 1 ms 100 SINGLE PULSE RJA = 125 oC/W 1 10 ms SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC 100 ms 1s 10 s DC 10 TA = 25 oC 0.1 1 0.1 -4 10 10 -3 0.01 0.01 0.1 1 10 100 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2008 Fairchild Semiconductor Corporation FDS8882 Rev.C 4 www.fairchildsemi.com FDS8882 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RJA = 125 C/W o t2 NTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -1 0.001 -4 10 10 -3 10 -2 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDS8882 Rev.C 5 www.fairchildsemi.com FDS8882 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM XSTM (R) The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 (c)2008 Fairchild Semiconductor Corporation FDS8882 Rev.C 6 www.fairchildsemi.com |
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